3BHB013088R0001 thyristor module
3BHB013088R0001 IGCT has made tremendous progress in power, reliability, switching speed, efficiency, cost, weight, and volume of the converter device, bringing new leaps to power electronics complete sets of equipment. IGCT integrates GTO chips with anti parallel diodes and gate driver circuits, and then connects them with the gate driver in a low inductance manner on the periphery. It combines the advantages of stable turn off capability of transistors and low on state loss of thyristors, and exhibits the performance of thyristors during the conduction stage and the characteristics of transistors during the turn off stage. IGCT has the characteristics of high current, high voltage, high switching frequency, high reliability, compact structure, low loss, low manufacturing cost, high yield, and good application prospects. 3BHB013088R0001 GTO using thyristor technology is a commonly used high-power switching device, which has higher performance in cut-off voltage compared to IGBT using transistor technology. However, the widely used standard GTO driving technology causes uneven turn-on and turn off processes, requiring high cost dv/dt and di/dt absorption circuits and high-power gate driving units, resulting in decreased reliability, higher price, and unfavorable series connection. However, before the maturity of high-power MCT technology, IGCT had already become the preferred solution for high-voltage, high-power, low-frequency AC converters.
IGCT Integrated Gate Commutated Thyristor is a new type of power semiconductor switching device developed for medium voltage frequency converters and used in giant power electronic complete sets of equipment (Integrated Gate Commutated Thyristor=Gate Commutated Thyristor+Gate Unit). Proposed by ABB in 1997. IGCT enables the converter device to
Significant progress has been made in power, reliability, switching speed, efficiency, cost, weight, and volume, bringing new leaps to power electronics equipment. IGCT integrates GTO chips with anti parallel diodes and gate driver circuits, and then connects them with the gate driver in a low inductance manner on the periphery. It combines the advantages of stable turn off capability of transistors and low on state loss of thyristors, and exhibits the performance of thyristors during the conduction stage and the characteristics of transistors during the turn off stage. IGCT has the characteristics of high current, high blocking voltage, high switching frequency, high reliability, compact structure, and low conduction loss. Moreover, it has low manufacturing cost and high yield, and has been widely used in power system grid devices (100MVA) and medium power industrial drive devices (5MW). IGCT has been successfully applied in the field of medium voltage frequency converters for 11 years (until 2009). Due to its high-speed switching capability, IGCT does not require buffer circuits, requiring fewer power components and greatly improving operational reliability.
IGCT combines the high-speed switching characteristics of IGBT (Insulated Gate Bipolar Transistor) with the high blocking voltage and low conduction loss characteristics of GTO (Gate Turn Off Thyristor). Generally, the trigger signal is transmitted to the IGCT unit through optical fiber. In the phase module of the active rectifier unit of ACS6000, each phase module is composed of IGCT, diode, and clamp capacitor, and is powered by an independent gate power supply unit GUSP.
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The company has a leading advantage in discontinuing control system components. We have a large inventory and surplus of control system components, as well as some hardware for the discontinued control system. We have also released many new hardware and products to support your existing control system or apply new control technologies. The discontinued “DCS system spare parts, PLC module spare parts,” complete machine and accessories series have a strong advantage. As long as you need PLC products, we can help you find them. The company has a great price advantage.
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